The difference between them is how each memory cell is designed. Dynamic cells are charge-based, where each bit is represented by a charge stored in a tiny capacitor. The charge leaks away in a short period of time, so the memory must be continually refreshed to prevent data loss. The act of reading a bit also serves to drain the capacitor, so it’s not possible to read that bit again until it has been refreshed. Static cells, however, are based on gates, and each bit is stored in four or six connected transistors. SRAM memories retain data as long as they have power; refreshing is not
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