Nanomaterials: Volume 2: Quantization and Entropy

by Engg Kamakhya Prasad Ghatak, Madhuchhanda Mitra

This monograph investigates the entropy in heavily doped (HD) quantized structures by analyzing under the influence of magnetic quantization, crossed electric and quantizing fields the range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces. Finally the authors address various challenges in today’s research of optoelectronic materials and give an outlook to future studies.

626 pages, Kindle Edition

Published April 6, 2020

Reviews

[Mrittik Ghosh · Rating 5 out of 5]

The importance of Entropy, an Universal Phenomena, is well-known since the inception of the subject thermodynamics, again a must read topic for scientists and engineers in general. In this book the authors have investigated the Entropy in Heavily Doped (HD) Ultrathin films (UFs), Doping superlattices, inversion and accumulation layers ,quantum wells(QWs), quantum well super-lattices, carbon nano-tubes, nano wires (NWs), quantum wire super-lattices, magnetic quantization, magneto size quantization, quantum dots (QDs), magneto inversion and accumulation layers, magneto quantum well super-lattices, magneto NIPIs, quantum dot super-lattices and other field aided nano structures. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronic materials and strong electric field in nano-devices change the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of the Entropy. Many band structure dependent physical properties like (Carrier Statistics, Thermoelectric Power, Debye Screening Length, Carrier contribution to the elastic constants, Diffusivity-mobility ratio, Measurement of Band-gap in the presence of Light Waves, Diffusion coefficient of the minority carriers, Nonlinear optical response, Third order nonlinear optical susceptibility, Generalized Raman gain, The plasma frequency, The activity coefficient, Magneto-Thermal effect in Quantized Structures, Normalized Hall coefficient, Reflection coefficient, Heat Capacity, Magnetic Susceptibilities, Faraday rotation, Fowler-Nordheim Field Emission, Optical Effective Mass, Einstein’s Photoemission, Righi-Leduc coefficient, Electric Susceptibility, Electric Susceptibility Mass, Electron Diffusion Thermo-power, Hydrostatic Piezo-resistance Coefficient, Relaxation time for Acoustic Mode Scattering and Gate Capacitance) have also pointed out in the aforesaid quantized structures and HD quantum confined optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic compounds under intense external fields has also been investigated in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the said physical properties in HD semiconductors and super-lattices have also been studied in this regard.
This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures. The book is written for post-graduate students, researchers, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience and technology and nanostructured materials in general.
I have totally enjoyed in reading the book and it should be a must addition in the library of academically alert scientific readers.