Growth and Characterization of Silicon-Carbide Hetero-Polytype Structures

by National Aeronautics and Space Administration

Films discussed in this repok were deposited at NASA Glenn Research Center on on- orientation 4H-Sic substrates. Substrates were patterned in order to form mesa structures of different shapes and sizes. The nominal thickness of the 3C-Sic film was approximately 10 microns although the thickness could change considerably between defect-free and defected mesa structures. The primary objective was to identify defect structures in defect-free mesas and in particular determine the degree and mode of strain relaxation in 3C films with thickness exceeding critical thickness. Skowronski, Marek Glenn Research Center

26 pages, Paperback

Published June 21, 2018

About the author

The National Aeronautics and Space Administration (NASA) is an independent agency of the U.S. federal government responsible for the civil space program, aeronautics research, and space research.