Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

by National Aeronautics and Space Administration

A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques. Hossain, T. and Khan, F. and Adesida, I. and Bohn, P. and Rittenhouse, T. and Lienhard, Michael (Technical Monitor) Glenn Research Center NASA/CR-2003-212198, NAS 1.26:212198, E-13801

32 pages, Paperback

Published June 20, 2018

About the author

The National Aeronautics and Space Administration (NASA) is an independent agency of the U.S. federal government responsible for the civil space program, aeronautics research, and space research.