Operation and Modeling of the MOS Transistor

by Yannis Tsividis

Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor , has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.

KEY FEATURES


· Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.


· Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.


· New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.


· Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

640 pages, Hardcover

First published October 23, 1998

Reviews

[Dr Amit · Rating 5 out of 5]

This is a very good book to understand about the concepts of MOSFETs when applied with voltages. The book features the physics background of the operation of the device. It is highly recommended as a textbook to start with Modeling of MOS Transistor.

[Lynn · Rating 4 out of 5]

Clear, explicit explanation of CMOS transistor modeling, along with helpful equations.

[Prasanta · Rating 5 out of 5]

good book

[Jitendra]

i want to read it