Integration of Advanced Micro- And Nanoeletronic Devices--Critical Issues and Solutions, Symposia Held April 13-16, 2004, San Francisco, California, U

by R.K. Singh, R. Ramesh, D. Kumar

The volume contains proceedings for two symposia. Symposium D, represented by 47 papers, addressed the deposition and characterization of the new high-k gate dielectrics and ferroelectrics required to facilitate improvements and allow further scaling of CMOS transistor, memory cell, and other advanced microelectronic device technologies. The other 21 papers, from Symposium E, focus on materials science and engineering issues related to oxide device fabrication such as deposition, patterning, interconnection, metallization, and large-scale integration to achieve high levels of device integration and multifunctionality on a chip; one of the important issues is the difficulties and means of growing epitaxial oxide films on technologically important substrates such as Si and GaAs. Annotation 2004 Book News, Inc., Portland, OR

471 pages, Hardcover

First published January 1, 2004