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Mosfet Modeling for VLSI Simulation: Theory And Practice (International Series on Advances in Solid State Electronics)

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This classic text, first published in 1993 by Springer- Verlag, explains compact modeling of electronic and semiconductor devices and components. The book deals with MOS field effect transistor (MOSFET) models that are derived from basic semiconductor theory. Coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in MOS VLSI technology. The assumptions used to arrive at the models are emphasized. Device reliability models are also covered. Arora is a Distinguished Lecturer of the IEEE Electron Devices Society. Annotation ©2008 Book News, Inc., Portland, OR (booknews.com)

605 pages, Hardcover

First published February 14, 2007

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